Materials Science and Applications of UltrawideBandgap III-Nitride Semiconductors

On Friday, October 2nd, at 11 AM, Prof. Ramón Collazo from the Department of Materials Science and Engineering North Carolina State University will present a seminar titled “Materials Science and Applications of Ultrawide Bandgap III-Nitride Semiconductors” The event will be hosted by Prof. Sampath Gamage and held in-person in the JSNN Auditorium.

ABSTRACT: Aluminum nitride and its alloy Al-rich AlGaN are an attractive family of semiconductors for extreme environment capable kV-class power devices and deep UV optoelectronics. This is due to their ultra-wide bandgap and high breakdown field. Despite these exceptional properties, AlGaN technology faces significant challenges, primarily due to difficulty in doping. Point defect management frameworks during semiconductor growth have been developed to reduce compensation and allow this material system to reach their potential. Examples of the implementation of these frameworks leading to state-of-the-art applications will be discussed.